DocumentCode :
831
Title :
Two-Dimensional Numerical Model and Turn-On Performance Simulation of Reversely Switched Dynistor
Author :
Lin Liang ; Quan Wei ; Yuehui Yu
Author_Institution :
Sch. of Opt. & Electron. Inf., Huazhong Univ. of Sci. & Technol., Wuhan, China
Volume :
29
Issue :
1
fYear :
2014
fDate :
Jan. 2014
Firstpage :
522
Lastpage :
528
Abstract :
In this paper, a two-dimensional simulation model of the reversely switched dynistor (RSD) has been introduced in detail. The model has been programmed in MATLAB/Simulink. Different base structures of the RSD are investigated through the model. The relationship between the maximum of turn-on voltage (UFmax) and the base structure parameters have been discussed. When the n-base doping concentration increases, the UFmax gets a slow decrease at first and rapid increase around 1.0 × 1015 cm-3. The UFmax decreases when the n-base width or the p-base width decreases. Especially, a dramatic decrease of the UFmax can be seen when the p-base width decreases to 70 μm. The experimental results of turn-on current and voltage waveforms have been compared with the simulation results to verify the model.
Keywords :
impurity distribution; power semiconductor switches; semiconductor device models; semiconductor doping; Matlab; Simulink; doping concentration; reversely switched dynistor; turn-on current; turn-on performance simulation; turn-on voltage; two dimensional numerical model; two-dimensional simulation model; voltage waveform; Base structure; pulsed power; reversely switched dynistor (RSD); two-dimensional numerical simulation;
fLanguage :
English
Journal_Title :
Power Electronics, IEEE Transactions on
Publisher :
ieee
ISSN :
0885-8993
Type :
jour
DOI :
10.1109/TPEL.2013.2255314
Filename :
6490066
Link To Document :
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