• DocumentCode
    831079
  • Title

    Establishment of a Radiation Hardened CMOS Manufacturing Process

  • Author

    London, A. ; Matteucci, D.A. ; Wang, R.C.

  • Author_Institution
    National Semiconductor Corporation Santa Clara, Calfiornia
  • Volume
    24
  • Issue
    6
  • fYear
    1977
  • Firstpage
    2056
  • Lastpage
    2059
  • Abstract
    A radiation hardened metal gate CMOS IC process, tolerant to doses in excess of 106 rads (Si), has been established by making necessary modifications to a standard process. These modifications are described, a definition of circuit radiation hardness is discussed, and typical electrical performance characteristics as a function of radiation dose are presented. Procedures are described for assuring the hardness of finished product. Operating life test data indicates that the process is inherently reliable.
  • Keywords
    CMOS integrated circuits; CMOS process; Circuit testing; Ionizing radiation; Life testing; MOS devices; Manufacturing processes; Oxidation; Radiation hardening; Threshold voltage;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1977.4329164
  • Filename
    4329164
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=831079