Title :
Improved signal-to-noise ratio in gain-levered InGaAs/InP MQW lasers
Abstract :
The gain-lever effect is demonstrated in long wavelength InGaAs/InP quantum well lasers for the first time. Preliminary measurements show an improvement in amplitude modulation efficiency of 10 dB at 900 MHz. Relative intensity noise increases by just 2.5 dB yielding a signal-to-noise ratio improvement of 7.5 dB.
Keywords :
III-V semiconductors; amplitude modulation; gallium arsenide; indium compounds; optical modulation; semiconductor device noise; semiconductor lasers; 900 MHz; InGaAs-InP; MQW lasers; amplitude modulation efficiency; gain-lever effect; relative intensity noise; signal-to-noise ratio;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19930158
