Superposed multiquantum barriers for InGaAlP heterojunctions

Author

Furuya, Akinori ; Tanaka, Hidenao

Author_Institution

NTT Corp., Tokyo, Japan

Volume

28

Issue

10

fYear

1992

fDate

10/1/1992 12:00:00 AM

Firstpage

1977

Lastpage

1982

Abstract

In a visible-light laser using In_0.5(Ga_1-xAl _x)_0.5P (0⩽x⩽1), the conduction-band discontinuity at the interface between the active layer and clad layer is not large enough to strongly suppress carriers overflowing into the clad layer, unlike in the GaAlAs system. A multiquantum barrier (MQB) is used to overcome this problem, and the electron-reflecting powers are calculated to determine the characteristics of this suppression. Electron-reflecting powers are calculated for a high-power, high-temperature laser with an In_0.5Ga_0.5P active layer, an In_0.5Ga_0.15 clad layer, and a set of superposed MQBs, and for a short-wavelength (λ:586-nm) laser composed of an In_0.5Ga_0.33Al_0.17P active layer, an In _0.5Ga_0.15Al_0.35P clad layer, and a set of superposed MQBs

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; semiconductor lasers; 586 nm; III-V semiconductors; In_0.5(Ga_1-xAl_x)_0.5P; In_0.5Ga_0.15 clad layer; In_0.5Ga_0.15Al_0.35P clad layer; In_0.5Ga_0.33Al_0.17P; In_0.5Ga_0.5P active layer; InGaAlP heterojunctions; carriers; clad layer; conduction-band discontinuity; electron-reflecting powers; interface; short wavelength laser; superposed multiquantum barriers; visible-light laser; Carrier confinement; Conducting materials; Diode lasers; Electrons; Heterojunctions; Laser modes; Laser transitions; Optical materials; Semiconductor lasers; Tunneling;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.159506

Filename

159506