• DocumentCode
    831199
  • Title

    Influence of rapid thermal nitridation process in N2O ambient on the endurance performance of FLOTOX EEPROM cells

  • Author

    Papadas, C. ; Ghibaudo, Gerard ; Pio, F. ; Riva, C. ; Mortini, P. ; Pananakakis, G.

  • Author_Institution
    SGS Thomson Microelectronics, Grenoble, France
  • Volume
    29
  • Issue
    2
  • fYear
    1993
  • Firstpage
    242
  • Lastpage
    243
  • Abstract
    A comparison between the endurance characteristics obtained on FLOTOX EEPROM cells with pure SiO2 as the tunnel insulator and rapid thermal processed nitrided oxides in N2O ambient is presented. The superiority of nitrided oxides for applications in future floating gate devices is demonstrated and the obtained higher reliability performance is attributed quantitatively to nitrogen incorporation in the tunnel insulator layer.
  • Keywords
    EPROM; circuit reliability; integrated circuit technology; integrated memory circuits; nitridation; rapid thermal processing; FLOTOX EEPROM cells; N 2O ambient; SiO 2; SiO xN y; endurance performance; floating gate devices; rapid thermal nitridation; rapid thermal processed nitrided oxides; reliability; tunnel insulator layer;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19930166
  • Filename
    184613
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=831199