• DocumentCode
    831619
  • Title

    Large area solar cells for future space power systems

  • Author

    Lillington, D.R. ; Cavicchi, B.T. ; Gillanders, M.S. ; Crotty, G.T. ; Krut, D.D.

  • Author_Institution
    Spectrolab Inc., Sylmar, CA, USA
  • Volume
    5
  • Issue
    1
  • fYear
    1990
  • Firstpage
    25
  • Lastpage
    29
  • Abstract
    Space silicon solar cell technology has matured to the extent that large-area planar silicon cells can be fabricated in sizes up to 8 cm*8 cm with efficiencies up to approximately 15%. In order to achieve substantially higher efficiencies, cells based on GaAs are required. It is shown that, subject to certain boundary conditions, the efficiency of GaAs/Ge cells can reach 24% when used in the dual-junction configuration or approximately 19.5% if the Ge substrate is passive. The electrooptical properties of these cells are reviewed, and prospects for achieving these efficiency goals are presented. Experimental performance data are given.<>
  • Keywords
    III-V semiconductors; gallium arsenide; germanium; solar cells; space vehicle power plants; 19.5 percent; 24 percent; GaAs; GaAs-Ge; Ge; III-V semiconductors; Si; dual-junction configuration; electrooptical properties; solar cells; space power systems; Boundary conditions; Costs; Gallium arsenide; Manufacturing; Photovoltaic cells; Physics; Power systems; Production; Silicon; Space technology;
  • fLanguage
    English
  • Journal_Title
    Aerospace and Electronic Systems Magazine, IEEE
  • Publisher
    ieee
  • ISSN
    0885-8985
  • Type

    jour

  • DOI
    10.1109/62.45988
  • Filename
    45988