DocumentCode
831619
Title
Large area solar cells for future space power systems
Author
Lillington, D.R. ; Cavicchi, B.T. ; Gillanders, M.S. ; Crotty, G.T. ; Krut, D.D.
Author_Institution
Spectrolab Inc., Sylmar, CA, USA
Volume
5
Issue
1
fYear
1990
Firstpage
25
Lastpage
29
Abstract
Space silicon solar cell technology has matured to the extent that large-area planar silicon cells can be fabricated in sizes up to 8 cm*8 cm with efficiencies up to approximately 15%. In order to achieve substantially higher efficiencies, cells based on GaAs are required. It is shown that, subject to certain boundary conditions, the efficiency of GaAs/Ge cells can reach 24% when used in the dual-junction configuration or approximately 19.5% if the Ge substrate is passive. The electrooptical properties of these cells are reviewed, and prospects for achieving these efficiency goals are presented. Experimental performance data are given.<>
Keywords
III-V semiconductors; gallium arsenide; germanium; solar cells; space vehicle power plants; 19.5 percent; 24 percent; GaAs; GaAs-Ge; Ge; III-V semiconductors; Si; dual-junction configuration; electrooptical properties; solar cells; space power systems; Boundary conditions; Costs; Gallium arsenide; Manufacturing; Photovoltaic cells; Physics; Power systems; Production; Silicon; Space technology;
fLanguage
English
Journal_Title
Aerospace and Electronic Systems Magazine, IEEE
Publisher
ieee
ISSN
0885-8985
Type
jour
DOI
10.1109/62.45988
Filename
45988
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