DocumentCode :
832082
Title :
An evaluation of HEMT potential for millimeter-wave signal sources using interpolation and harmonic balance techniques
Author :
Kwon, Youngwoo ; Pavlidis, Dimitris ; Tutt, Marcel N.
Author_Institution :
Michigan Univ., Ann Arbor, MI, USA
Volume :
1
Issue :
12
fYear :
1991
Firstpage :
365
Lastpage :
367
Abstract :
A large-signal analysis method based on an harmonic balance technique and a 2-D cubic spline interpolation function has been developed and applied to the prediction of InP-based InAlAs/InGaAs heterostructure HEMT oscillator performance for frequencies extending up to the submillimeter-wave range. The large-signal analysis method uses a limited number of DC and small-signal S-parameter data and allows the accurate characterization of HEMT large-signal behavior. The method has been validated experimentally using load-pull measurement. Oscillation frequency, power performance, and load requirements are discussed, with an operation capability of 300 GHz predicted using state-of-the-art devices (f/sub max/ approximately 450 GHz).<>
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; microwave oscillators; semiconductor device models; solid-state microwave devices; 2-D cubic spline interpolation function; 300 GHz; 450 GHz; EHF; HEMT large-signal behavior; InAlAs-InGaAs; InP substrate; accurate characterization; harmonic balance techniques; large-signal analysis method; load requirements; load-pull measurement; millimeter-wave signal sources; oscillation frequency; power performance; semiconductors; state-of-the-art devices; submillimeter-wave range; Frequency; HEMTs; Harmonic analysis; Indium compounds; Indium gallium arsenide; Interpolation; Millimeter wave technology; Oscillators; Performance analysis; Spline;
fLanguage :
English
Journal_Title :
Microwave and Guided Wave Letters, IEEE
Publisher :
ieee
ISSN :
1051-8207
Type :
jour
DOI :
10.1109/75.103852
Filename :
103852
Link To Document :
بازگشت