Title :
Gain and noise characteristics of a 1.5 mu m near-travelling-wave semiconductor laser amplifier
Author :
Simon, J.-C. ; Doussiere, P. ; Pophillat, L. ; Fernier, B.
Author_Institution :
CNET/LAB, Lannion, France
fDate :
3/30/1989 12:00:00 AM
Abstract :
The spectral dependence of the gain and noise characteristics of a gas source molecular beam epitaxy (GSMBE)-grown BH-GaInAsP near-travelling-wave semiconductor laser amplifier are presented, from which an indication of nonresonant internal losses is given. An intrinsic noise figure of 6 dB at an internal gain of 28 dB is obtained.
Keywords :
III-V semiconductors; electron device noise; gallium arsenide; gallium compounds; indium compounds; molecular beam epitaxial growth; optical communication equipment; semiconductor junction lasers; 1.5 micron; 28 dB; 6 dB; GSMBE; GaInAsP laser; MBE; buried heterostructure; gain; gas source molecular beam epitaxy; internal gain; intrinsic noise figure; near-travelling-wave semiconductor laser amplifier; noise characteristics; nonresonant internal losses; spectral dependence;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890298
