• DocumentCode
    832810
  • Title

    Crystal Growth and Chemical Preferential Etching in Fabrication of Epitaxial Silicon Detectors

  • Author

    Osada, S. ; Htusimi, K. ; Fuchi, Y. ; Ohkawa, S. ; Takiguchi, R. ; Kim, C.

  • Author_Institution
    Faculty of Education, Yamanashi University, Kofu, Japan
  • Volume
    25
  • Issue
    1
  • fYear
    1978
  • Firstpage
    371
  • Lastpage
    377
  • Keywords
    Chemicals; Conductivity; Epitaxial layers; Etching; Fabrication; Gas detectors; Impurities; Nuclear electronics; Silicon; Substrates;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1978.4329334
  • Filename
    4329334
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=832810