Detection of CdS(Te) and ZnSe(Te) scintillation light with silicon photodiodes

Author

Schotanus, P. ; Dorenbos, P. ; Ryzhikov, V.D.

Author_Institution

Quartz & Silice Holland BV, De Meern, Netherlands

Volume

39

Issue

4

fYear

1992

fDate

8/1/1992 12:00:00 AM

Firstpage

546

Lastpage

550

Abstract

Some scintillation characteristics of CdS(Te) have been investigated. The scintillation emission spectrum of CdS(Te) single crystals is situated in a band between 560 and 800 nm with, maximum at 640 nm. The light yield of this red emitting crystal on a microsecond time scale is rather large: approximately 1.7×10⁴ photons per MeV of absorbed γ-ray energy. The scintillation light can be efficiently detected with silicon photodiodes. Results are presented. Main decay time components of 270 ns and 3.0 μs were measured. The scintillation mechanism and the application of the material are discussed. Some data regarding a similar system, ZnSe(Te), are presented

Keywords

cadmium compounds; scintillation counters; zinc compounds; CdS(Te); Si photodiodes; ZnSe(Te); absorbed γ-ray energy; microsecond time scale; red emitting crystal; scintillation emission spectrum; single crystals; Conducting materials; Crystalline materials; Optical materials; Photodiodes; Photomultipliers; Photonic crystals; Radiation detectors; Silicon radiation detectors; Solid scintillation detectors; Wavelength measurement;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.159663

Filename

159663