Visible light emission from silicon: a quantum effect in highly porous materials

Author

Vial, J.C. ; Herino, R. ; Billat, S. ; Bsiesy, A. ; Gaspard, F. ; Ligeon, M. ; Mihalcescu, I. ; Muller, F. ; Romestain, R.

Author_Institution

Lab. de Spectrometrie Phys., Univ. Joseph Fourier de Grenoble, St. Martin d´´Heres, France

Volume

39

Issue

4

fYear

1992

fDate

8/1/1992 12:00:00 AM

Firstpage

563

Lastpage

569

Abstract

The authors discuss progress in the control of the luminescent properties of porous silicon and in the understanding of the basic mechanisms which govern the light emission. The main features of porous silicon formation and properties are briefly recalled. The photoluminescence characteristics are reported. It is shown that anodic oxidation of porous silicon is a technique which provides photoluminescent layers with good mechanical properties and enhanced emission efficiency. A model accounting for the quite long measured carrier lifetimes is outlined. The electroluminescence which appears during the anodic oxidation of porous silicon in pure water was studied

Keywords

elemental semiconductors; luminescence of inorganic solids; photoluminescence; quantum theory; silicon; anodic oxidation; carrier lifetimes; electroluminescence; enhanced emission efficiency; highly porous materials; light emission; luminescent properties; mechanical properties; photoluminescence characteristics; porous Si; pure water; quantum effect; visible light emission; Crystalline materials; Crystallization; Electroluminescence; Luminescence; Oxidation; Photoluminescence; Radiative recombination; Semiconductor films; Silicon; Temperature;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.159666

Filename

159666