Noise in a-Si:H p-i-n detector diodes

Author

Cho, Gyuseong ; Qureshi, S. ; Drewery, J.S. ; Jing, T. ; Kaplan, S.N. ; Lee, H. ; Mireshghi, A. ; Perez-Mendez, V. ; Wildermuth, D.

Author_Institution

Lawrence Berkeley Lab., California Univ., CA, USA

Volume

39

Issue

4

fYear

1992

fDate

8/1/1992 12:00:00 AM

Firstpage

641

Lastpage

644

Abstract

Noise of a-Si:H p-i-n diodes (5~50 μm thick) under reverse bias was investigated. The current-dependent 1/f type noise was found to be the main noise component at high bias. At low bias the thermal noise from a series resistance of the p-layer and the metallic contacts was the dominant noise source which was unrelated to the reverse current through the diode. The noise associated with the p-layer resistance decreased significantly on annealing under reverse bias, reducing the total zero bias noise by a factor of two, approximately. The noise recovered to the original value on subsequent annealing without bias. In addition to the resistive noise there seemed to be a shaping time-independent noise component at zero biased diodes

Keywords

amorphous semiconductors; p-i-n diodes; position sensitive particle detectors; semiconductor counters; semiconductor device noise; silicon; 5 to 50 micron; Si:H; amorphous Si; current-dependent 1/f type noise; metallic contacts; noise source; p-i-n detector diodes; p-layer; resistive noise; reverse bias; shaping time-independent noise component; thermal noise; total zero bias noise; Background noise; Noise measurement; Noise shaping; P-i-n diodes; PIN photodiodes; Pulse amplifiers; Pulse measurements; Pulse shaping methods; Radiation detectors; Thermal resistance;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.159679

Filename

159679