Observation and Modeling of a Room-Temperature Negative Characteristic Temperature 1.3- $\mu$ m p-Type Modulation-Doped Quantum-Dot Laser

A room-temperature negative characteristic temperature (T₀ ) and ultralow threshold current density (J_th) of 48 Amiddotcm^-2 are demonstrated for a 1.3-mum InAs quantum dot laser. These characteristics are obtained by combining a high-growth-temperature GaAs spacer layer with p-type modulation doping of the quantum dots in multiple layer dot-in-a-well structures. Through a comparison of p-doped and undoped devices, a photon coupling mechanism is proposed to account for the different temperature dependences of Jth for the two devices. Numerical simulations based on a rate equation model, which includes photon coupling between ground and excited quantum dot states, are performed. The simulations are able to account for the very different temperature-dependent Jth behavior of the doped and undoped device