Title :
High-speed InGaAlAs/InAlAs multiple quantum well electrooptic phase modulators with bandwidth in excess of 20 GHz
Author :
Wakita, Koichi ; Kotaka, Isamu ; Asai, Hiromitsu
Author_Institution :
NTT Opto-electron. Lab., Kanagawa, Japan
Abstract :
High-speed phase modulation (in the frequency bandwidth of 20 GHz, the highest yet reported for multiple quantum well (MQW) phase modulators) for waveguided InGaAlAs/InAlAs MQW optical modulators is reported. The modulator successfully operates at a long wavelength of 1-55 mu m with a low required voltage for phase shift (V pi =3.8 V), small intensity modulation depth below 1.5 dB, and without any modulation bandwidth degradation up to 20 GHz under high input optical power of 0 dBm in single-mode fiber.<>
Keywords :
III-V semiconductors; aluminium compounds; electro-optical devices; gallium arsenide; indium compounds; integrated optics; optical modulation; phase modulation; semiconductor quantum wells; 1.55 micron; 20 GHz; 3.8 V; III-V semiconductor; InGaAlAs-InAlAs; InGaAlAs/InAlAs multiple quantum well electrooptic phase modulators; bandwidth; high input optical power; high speed phase modulation; phase shift; single-mode fiber; small intensity modulation depth; waveguided InGaAlAs/InAlAs MQW optical modulators; Bandwidth; Frequency; High speed optical techniques; Indium compounds; Intensity modulation; Low voltage; Optical modulation; Optical waveguides; Phase modulation; Quantum well devices;
Journal_Title :
Photonics Technology Letters, IEEE
