Title :
A low-noise, wideband, integrated CMOS transimpedance preamplifier for photodiode applications
Author :
Binkley, David M. ; Rochelle, James M. ; Paulus, Michael J. ; Casey, Michael E.
Author_Institution :
CTI PET Systems, Inc., Knoxville, TN, USA
fDate :
8/1/1992 12:00:00 AM
Abstract :
A low-noise, wideband, integrated CMOS transimpedance preamplifier is presented for silicon avalanche photodiode (APD) applications. The preamplifier, fabricated in a standard 2-μm CMOS technology, features a transimpedance gain of 45 kΩ, a risetime of 22 ns, a series noise of 1.6 nV/Hz1/2, and a wideband equivalent input-noise current of 12 nA for a source capacitance of 12 pF. The measured 22 Na timing resolution of 9.2-ns FWHM and energy resolution of 22.4% FWHM for the RCA C30994 bismuth germanate (BGO)/APD detector module coupled to the preamplifier was comparable to the performance reported using charge-sensitive preamplifiers. This illustrates that transimpedance preamplifiers should be considered for APD applications, especially where APD noise current dominates noise from feedback resistors in the 10-kΩ to 50-kΩ range
Keywords :
CMOS integrated circuits; avalanche photodiodes; linear integrated circuits; nuclear electronics; preamplifiers; scintillation counters; wideband amplifiers; 10 to 50 kohm; 12 pF; 2 micron; 22 ns; 9.2 ns; 22Na timing resolution; BGO-photodiode system; Bi4Ge3O12; RCA C30994; avalanche photodiode; energy resolution; integrated CMOS transimpedance preamplifier; low noise wideband preamplifier; noise current; photodiode applications; Avalanche photodiodes; CMOS technology; Capacitance; Current measurement; Energy measurement; Energy resolution; Preamplifiers; Silicon; Timing; Wideband;
Journal_Title :
Nuclear Science, IEEE Transactions on
