DocumentCode :
833642
Title :
Development of a CMOS time memory cell VLSI and a CAMAC module with 0.5 ns resolution
Author :
Arai, Y. ; Ikeno, M. ; Matsumura, T.
Author_Institution :
KEK, Nat. Lab. for High Energy Physics, Ibaraki, Japan
Volume :
39
Issue :
4
fYear :
1992
fDate :
8/1/1992 12:00:00 AM
Firstpage :
784
Lastpage :
788
Abstract :
A CMOS time-to-digital converter chip, the time memory cell (TMC), for a high-rate wire chamber application has been developed. The chip had a timing resolution of 0.52 ns, dissipated only 7 mW/channel, and contained 4 channels in a chip. Each channel had 1024 memory locations which acted as a buffer 1 μs deep. The chip was fabricated in a 0.8-μm CMOS process and had dimensions of 5.0 mm by 5.6 mm. Using the TMC chip, a CAMAC module with 32 input channels was developed. This module was designed to operate in both common start and common stop modes. The module circuit and test results are described
Keywords :
CAMAC; CMOS integrated circuits; VLSI; analogue-digital conversion; nuclear electronics; physics computing; proportional counters; 0.8 micron; 5 mm; 5.6 mm; CAMAC module; CMOS time memory cell VLSI; TMC; common start; common stop modes; high-rate wire chamber application; module circuit; test results; time memory cell; time-to-digital converter chip; timing resolution; CAMAC; CMOS process; CMOS technology; Circuit testing; Clocks; Delay effects; Energy resolution; Laboratories; Timing; Very large scale integration;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/23.159707
Filename :
159707
Link To Document :
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