Title :
Grating spectrograph integrated with photodiode array in InGaAsP/InGaAs/InP
Author :
Cremer, C. ; Emeis, N. ; Schier, M. ; Heise, G. ; Ebbinghaus, G. ; Stoll, L.
Author_Institution :
Siemens AG, Munich, Germany
Abstract :
A grating spectrograph integrated monolithically for the first time in the InGaAsP system with a photodiode array for a dense WDM application is presented for the 1.5 mu m wavelength region. The chip provides 42 wavelength channels with a spacing of 4 mm, a channel crosstalk of approximately -15 dB, an internal photodiode efficiency of 90%, and a photodiode capacitance of 0.33 pF. The chip needs no optical adjustments. It is therefore well suited for mass production.<>
Keywords :
III-V semiconductors; diffraction gratings; frequency division multiplexing; gallium arsenide; gallium compounds; indium compounds; integrated optoelectronics; multiplexing equipment; optical communication equipment; photodiodes; spectrometers; 0.33 pF; 1.5 micron; 90 percent; IR; InGaAsP-InGaAs-InP; WDM application; channel crosstalk; grating spectrograph; internal photodiode efficiency; mass production; monolithic integration; photodiode array; photodiode capacitance; semiconductors; wavelength channels; wavelength division multiplexing; Etching; Gratings; Indium gallium arsenide; Indium phosphide; Metallization; Optical filters; Optical waveguides; Photodiodes; Slabs; Wavelength division multiplexing;
Journal_Title :
Photonics Technology Letters, IEEE
