Grating spectrograph integrated with photodiode array in InGaAsP/InGaAs/InP

Author

Cremer, C. ; Emeis, N. ; Schier, M. ; Heise, G. ; Ebbinghaus, G. ; Stoll, L.

Author_Institution

Siemens AG, Munich, Germany

Volume

4

Issue

1

fYear

1992

Firstpage

108

Lastpage

110

Abstract

A grating spectrograph integrated monolithically for the first time in the InGaAsP system with a photodiode array for a dense WDM application is presented for the 1.5 mu m wavelength region. The chip provides 42 wavelength channels with a spacing of 4 mm, a channel crosstalk of approximately -15 dB, an internal photodiode efficiency of 90%, and a photodiode capacitance of 0.33 pF. The chip needs no optical adjustments. It is therefore well suited for mass production.<>

Keywords

III-V semiconductors; diffraction gratings; frequency division multiplexing; gallium arsenide; gallium compounds; indium compounds; integrated optoelectronics; multiplexing equipment; optical communication equipment; photodiodes; spectrometers; 0.33 pF; 1.5 micron; 90 percent; IR; InGaAsP-InGaAs-InP; WDM application; channel crosstalk; grating spectrograph; internal photodiode efficiency; mass production; monolithic integration; photodiode array; photodiode capacitance; semiconductors; wavelength channels; wavelength division multiplexing; Etching; Gratings; Indium gallium arsenide; Indium phosphide; Metallization; Optical filters; Optical waveguides; Photodiodes; Slabs; Wavelength division multiplexing;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.124893

Filename

124893