DocumentCode
833859
Title
New selective anodization process for Nb Josephson junction with AlOx barrier
Author
Morohashi, Shin´ichi ; Ikuta, Michiaki ; Miyoshi, Tatsuya ; Matsumoto, Daiki ; Ariyoshi, Seiichiro ; Ukibe, Masahiro ; Ohkubo, Masataka ; Matsuo, Hiroshi
Author_Institution
Dept. of Adv. Mater. Sci. & Eng., Fac. of Eng. Yamaguchi Univ., Ube, Japan
Volume
15
Issue
2
fYear
2005
fDate
6/1/2005 12:00:00 AM
Firstpage
98
Lastpage
101
Abstract
One of the most important factor of the superconducting tunnel junction for a particle and radiation detection is the sub-gap leakage current. An anodization of a junction edge is an effective method to reduce the sub-gap leakage current. In a new fabrication process of a Nb/Al-AlOx-Al/Nb junction, the sputtered Al2O3 layers with 10 nm thickness are used as not only the protection layer for the upper surface of both the base and counter electrodes in the anodization process, but also the etching stop layer for the formation of the contact hole by reactive ion etching process.
Keywords
aluminium compounds; anodisation; leakage currents; niobium; sputter etching; sputtered coatings; superconducting junction devices; superconducting particle detectors; 10 nm; Al2O3; Josephson junction; Nb-Al-AlOx-Al-Nb; particle detection; radiation detection; reactive ion etching process; selective anodization process; sputtering; sub gap leakage current reduction; superconducting tunnel junction; Fabrication; Josephson junctions; Leakage current; Niobium; Plasma accelerators; Plasma applications; Plasma confinement; Radiation detectors; Sputter etching; Sputtering; Anodization; Nb/Al-AlOx-Al/Nb junction; detector; facing target sputtering;
fLanguage
English
Journal_Title
Applied Superconductivity, IEEE Transactions on
Publisher
ieee
ISSN
1051-8223
Type
jour
DOI
10.1109/TASC.2005.849703
Filename
1439585
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