Title :
160°C pulsed laser operation of AlGaInP-based vertical-cavity surface-emitting lasers
Author :
Rossbach, R. ; Butendeich, R. ; Ballmann, T. ; Raabe, B. ; Jetter, M. ; Schweizer, H. ; Scholz, F.
Abstract :
Pulsed lasing operation of a 670 nm AlGaInP-based oxide-confined vertical-cavity surface-emitting laser (VCSEL) at high temperatures is demonstrated. At +120°C heatsink temperature output power exceeded 0.5 mW and at +160°C 25 μW output power was achieved
Keywords :
III-V semiconductors <AlGaInP-based vert.-cavity surface-emitting lasers, 160°C pulsed laser operation>; aluminium compounds <AlGaInP-based vert.-cavity surface-emitting lasers, 160°C pulsed laser operation>; gallium compounds <AlGaInP-based vert.-cavity surface-emitting lasers, 160°C pulsed laser operation>; indium compounds <AlGaInP-based vert.-cavity surface-emitting lasers, 160°C pulsed laser operation>; optical pulse generation <AlGaInP-based vert.-cavity surface-emitting lasers, 160°C pulsed laser operation>; quantum well lasers <AlGaInP-based vert.-cavity surface-emitting lasers, 160°C pulsed laser operation>; surface emitting lasers <AlGaInP-based vert.-cavity surface-emitting lasers, 160°C pulsed laser operation>; thermal stability <AlGaInP-based vert.-cavity surface-emitting lasers, 160°C pulsed laser operation>; 0.5 mW; 160 C; 25 muW; 670 nm; AlGaInP; compressively strained quantum wells; emission wavelength shift; high temperatures; lateral heat removal; oxide-confined laser; pulsed laser operation; red lasers; temperature limit; ultimate intrinsic limits; ultrashort pulsed operation; vertical-cavity surface-emitting lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20031040
