• DocumentCode
    833962
  • Title

    Analysis of the barrier in vertically-stacked interface-treated Josephson junctions

  • Author

    Inoue, Masumi ; Yoshinaga, Yasuyuki ; Wakita, Kazuya ; Taniike, Koichiro ; Kimura, Taishi ; Fujimaki, Akira ; Hayakawa, Hisao

  • Author_Institution
    Dept. of Quantum Eng., Nagoya Univ., Japan
  • Volume
    15
  • Issue
    2
  • fYear
    2005
  • fDate
    6/1/2005 12:00:00 AM
  • Firstpage
    141
  • Lastpage
    144
  • Abstract
    The authors have investigated the structure and the composition of the barrier in YBCO vertically-stacked-type interface-treated Josephson junctions by TEM and TEM-EDS. The barrier was formed by the Ar ion milling of the base YBCO electrode surface and the subsequent annealing. For a sample treated with accelerating voltage (Vacc) of 1300 V, we observed Y2O3 phases in the barrier. In contrast, for a sample with Vacc=700 V, we could observe few Y2O3 phases. Our TEM observation suggested that junctions with higher Jc fabricated with lower Vacc would have thinner and more uniform barriers. In addition, the composition of the barrier was Y-rich and Cu-poor, and such deviation decreased with decreasing Vacc. These tendencies well correspond to the results for ramp-edge-type junctions reported so far.
  • Keywords
    X-ray spectra; annealing; barium compounds; high-temperature superconductors; superconducting junction devices; transmission electron microscopy; yttrium compounds; 1300 V; 700 V; Ar ion milling; TEM observation; Y2O3; YBCO; YBa2Cu3O7-x; accelerating voltage; annealing; barrier analysis; energy dispersive X-ray spectroscopy analysis; vertically-stacked interface-treated Josephson junctions; Argon; Circuits; Fabrication; High temperature superconductors; Josephson junctions; Niobium; Reproducibility of results; Spectroscopy; Superconducting films; Yttrium barium copper oxide; Barrier; Josephson junction; YBCO; vertically-stacked interface-treated junction;
  • fLanguage
    English
  • Journal_Title
    Applied Superconductivity, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1051-8223
  • Type

    jour

  • DOI
    10.1109/TASC.2005.849718
  • Filename
    1439596