DocumentCode :
833994
Title :
Temperature- and Field-Dependent Charge Relaxation in SiO2 Gate Insulators
Author :
Boesch, H.E., Jr. ; McGarrity, J.M. ; McLean, F.B.
Author_Institution :
Harry Diamond Laboratories 2800 Powder Mill Road Adelphi, Maryland 20783
Volume :
25
Issue :
3
fYear :
1978
fDate :
6/1/1978 12:00:00 AM
Firstpage :
1012
Lastpage :
1016
Abstract :
Experimental results are presented for the time dependence of the relaxation of flat-band voltage shift (¿VFB) induced by ionizing radiation in metaloxide-semiconductor (MOS) capacitors incorporating radiation-hard wet (pyrogenic H20) thermally-grown SiO2 gate insulators. ¿VFB was observed from 0.4 ms to 800 s following short-pulse sample irradiation at temperatures from 79 to 295 K and with applied fields from -6 to + 6 MV/cm. The results illustrate the strong temperature and field dependences of hole transport in the SiO2 which is responsible for the early annealing of the radiation-induced ¿VFB. Examples are given of the manner in which these data may be applied to estimate the response of radiation-hard MOS devices at various times after irradiation, particularly in the potentially troublesome low temperature (80-150 K) regime.
Keywords :
Annealing; Electron beams; Insulation; Ionizing radiation; Linear particle accelerator; MOS capacitors; MOS devices; Temperature dependence; Temperature sensors; Threshold voltage;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.1978.4329453
Filename :
4329453
Link To Document :
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