Low dark current 4H-SiC avalanche photodiodes

Author

Guo, Xiangyi ; Beck, A. ; Yang, Bo ; Campbell, J.C.

Volume

39

Issue

23

fYear

2003

Abstract

The fabrication and characterisation of low dark current 4H-SiC avalanche photodiodes is reported. Current-voltage characteristics for a 100 μm-diameter device indicate that near breakdown, for a photocurrent gain greater than 10³, the dark current is less than 2 nA. The dark current is dominated by surface leakage at the mesa sidewall. Significant reduction of the dark current has been achieved by improved sidewall passivation

Keywords

avalanche photodiodes <low dark current 4H-SiC avalanche photodiodes>; leakage currents <low dark current 4H-SiC avalanche photodiodes>; oxidation <low dark current 4H-SiC avalanche photodiodes>; passivation <low dark current 4H-SiC avalanche photodiodes>; rapid thermal annealing <low dark current 4H-SiC avalanche photodiodes>; silicon compounds <low dark current 4H-SiC avalanche photodiodes>; wide band gap semiconductors <low dark current 4H-SiC avalanche photodiodes>; SiC; avalanche photodiodes; current voltage characteristics; fabrication; high gain; high temperature annealing; improved sidewall passivation; low dark current photodiodes; mesa sidewall; near breakdown; plasma enhanced chemical vapour deposition; surface leakage; thermal oxidation; wide bandgap material;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:20031059

Filename

1248986