Title :
Dose Rate and Extended Total Dose Characterization of Radiation Hardened Metal Gate CMOS Integrated Circuits
Author :
London, A. ; Wang, R.C.
Keywords :
CMOS integrated circuits; CMOS process; Gamma rays; Interface states; Ionizing radiation; Logic functions; Radiation hardening; Random access memory; Switching circuits; Threshold voltage;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1978.4329509
