Title :
Radiation-Hardened CMOS Devices for Linear Circuit Applications
Author :
Sanders, T.J. ; Ports, K.A.
Author_Institution :
Harris Semiconductor Melbourne, Fla
Abstract :
In the past, the use of MOS devices in a radiation environment has normally been restricted to applications requiring a 15 volt power supply or less. This paper discusses a new process for manufacturing high-voltage (30 volt) radiation-hardened CMOS devices for linear circuit applications. Devices have been fabricated which demonstrate hardness above 2 Mrads(Si). This paper also discusses necessary controls and design rules for this process.
Keywords :
Aluminum; CMOS process; Fabrication; Immune system; Linear circuits; MOS devices; Plasma temperature; Process control; Resists; Surface resistance;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1978.4329554
