DocumentCode :
834975
Title :
Radiation Hardening of Electron Voltaic Cells
Author :
Woodbury, Richard C. ; Van Epps, Richard A. ; Olson, Don I.
Volume :
25
Issue :
6
fYear :
1978
Firstpage :
1479
Lastpage :
1482
Abstract :
This paper contains a report of the performance of several silicon electron-voltaic cells designed for extended life under Sr90-Y90 radiation. Measurements of short circuit current are reported for electron fluence levels up to 1017 e/cm2. Also, an approximate calculation of initial open circuit voltage, short circuit current, and efficiency, is provided for comparison purposes. The essential result of the study is that the silicon electron-vol taic cell, using a Sr90-Y90 source of electrons, can be fabricated to deliver 2 kWh/kg with a life of 3000 hours and with an efficiency of 6-7 percent.
Keywords :
Boron; Current measurement; Degradation; Diodes; Electrons; Radiation hardening; Short circuit currents; Silicon; Space charge; Voltage;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.1978.4329557
Filename :
4329557
Link To Document :
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