Design Approach to Radiation-Hardened I2L Gate Arrays

Conventional I2L structures are considered for the design of radiation-hardened I2L gate arrays, and design guidelines have been developed for this purpose. It is concluded that the parallel injector design offers the bestperformance in terms of speed, processing simplicity and radiation hardness. Performance data achieved for the gate arrays include a minimum delay time of 7.5 ns for the basic 4-collector inverter of the array, neutron failure threshold of ~3 × 1013 n/cm2, and dose rate upset threshold of ~5 × 109 rads(Si)/s.