Non-uniform carrier accumulation in optical confinement layer as ultimate power limitation in ultra-high-power broad-waveguide pulsed InGaAs/GaAs/AlGaAs laser diodes

The effect of spatially non-uniform accumulation of carriers in the optical confinement layer of broad-waveguide InGaAs/GaAs/AlGaAs-based ultra-high power lasers operating at 1.06 mum under very high pulsed pumping has been analysed and shown to be an important limitation for the output power. A calculation using a semi-analytical theory is in good agreement with the recently published experimental data. A narrow asymmetric waveguide laser construction is predicted to alleviate the problem