Temperature rise at mirror facet of CW semiconductor lasers

Author

Yoo, Jay S. ; Lee, Hong H. ; Zory, Peter

Author_Institution

Dept. of Chem. Eng., Florida Univ., Gainesville, FL, USA

Volume

28

Issue

3

fYear

1992

fDate

3/1/1992 12:00:00 AM

Firstpage

635

Lastpage

639

Abstract

A relationship is derived for the temperature rise at the mirror facet of semiconductor lasers. The analytical result is based on the model of C.H. Henry et al. (1979) as applied to CW lasers and a thermal model. The effects of active layer length and its thickness, surface recombination velocity, output intensity, and an effective thermal length are delineated for the temperature rise. A comparison with experimental results reported in the literature shows good agreement for the facet temperature rise. A by-product is an approximate relationship for the temperature distribution along the lasing direction

Keywords

laser accessories; mirrors; semiconductor junction lasers; temperature distribution; thermo-optical effects; active layer length; continuous wave semiconductor lasers; effective thermal length; facet temperature rise; lasing direction; mirror facet; output intensity; surface recombination velocity; temperature distribution; thermal model; thickness; Heat sinks; Heating; Laser modes; Mirrors; Optical pulses; Radiative recombination; Semiconductor lasers; Surface emitting lasers; Surface resistance; Temperature;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.124987

Filename

124987