Selective growth of InAs quantum dots by metalorganic chemical vapor deposition

Author

Yeoh, Terence S. ; Swint, Reuel B. ; Gaur, Anshu ; Elarde, Victor C. ; Coleman, J.J.

Author_Institution

Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA

Volume

8

Issue

4

fYear

2002

Firstpage

833

Lastpage

838

Abstract

We report results of both strain-driven surface segregation of indium from InGaAs thin films as well as selective area epitaxy of InAs quantum dots using these films. InAs segregation from an underlying InGaAs film allows for preferential growth of quantum dots when additional InAs is deposited. By using standard lithography techniques, a two-step selective growth process for quantum dots is achieved. Furthermore, by utilizing self-assembled nanostructures as a template, selective growth of coalesced wires and dots with 100-nm feature sizes are realized.

Keywords

III-V semiconductors; MOCVD; indium compounds; nanotechnology; optical films; photolithography; segregation; self-assembly; semiconductor quantum dots; 100 nm; InAs; InAs quantum dots; InGaAs; InGaAs thin films; coalesced dots; coalesced wires; feature sizes; metalorganic chemical vapor deposition; optical films; preferential growth; selective area epitaxy; selective growth; self-assembled nanostructures; standard lithography techniques; strain-driven surface segregation; two-step selective growth process; underlying InGaAs film; Chemical vapor deposition; Epitaxial growth; Indium gallium arsenide; Lithography; Nanostructures; Quantum computing; Quantum dots; Self-assembly; Surface morphology; US Department of Transportation;

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/JSTQE.2002.801735

Filename

1039476