• DocumentCode
    836176
  • Title

    Uncooled C -Band Wide-Band Gain Lasers With 32-Channel Coverage and - 20-dBm ASE Injection for WDM-PON

  • Author

    Lee, E.H. ; Bang, Y.C. ; Kang, J.K. ; Keh, Y.C. ; Shin, D.J. ; Lee, Joon Sang ; Park, S.S. ; Kim, Inna ; Lee, Jung Keun ; Oh, Y.K. ; Jang, D.H.

  • Volume
    18
  • Issue
    5
  • fYear
    2006
  • fDate
    3/1/2006 12:00:00 AM
  • Firstpage
    667
  • Lastpage
    669
  • Abstract
    We report a spectrum-sliced amplified spontaneous emission-injected wide-band gain laser covering a temperature range over 110 ^\\circ C as well as entire 32 100-GHz-spaced channels (1533–1558 nm) in 155-Mb/s upstream transmissions over 25 km of single-mode fiber in a wavelength-division-multiplexed passive optical network. The wide-band gain laser diode employs asymmetric multiple quantum-well structure and low antireflection coating in order to widen the gain spectrum.
  • Keywords
    Optical communication; quantum-well (QW) lasers; semiconductor lasers; wavelength-division multiplexing (WDM); Bandwidth; Diode lasers; Fiber lasers; Laser transitions; Laser tuning; Quantum well lasers; Semiconductor lasers; Temperature distribution; Wavelength division multiplexing; Wideband; Optical communication; quantum-well (QW) lasers; semiconductor lasers; wavelength-division multiplexing (WDM);
  • fLanguage
    English
  • Journal_Title
    Photonics Technology Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1041-1135
  • Type

    jour

  • DOI
    10.1109/LPT.2006.870115
  • Filename
    1597290
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=836176