• DocumentCode
    836295
  • Title

    A New Quantity to Describe Power Semiconductor Subcycle Current Ratings

  • Author

    Motto, John W., Jr.

  • Author_Institution
    Semiconductor Division, Westinghouse Electric Corporation
  • Issue
    4
  • fYear
    1971
  • fDate
    7/1/1971 12:00:00 AM
  • Firstpage
    510
  • Lastpage
    517
  • Abstract
    A new quantity for predicting the subcycle surge current ratings of silicon diodes and thyristors is presented. The quantity I2¿t is shown to be much more valid than the more conventional I2t rating in coordinating power semiconductors with fast-acting current-limiting fuses. The requirement of the device to block reverse voltage on the next half-cycle following the surge current is reviewed and shown to be quantitatively significant in the subcycle current capability of power semiconductors.
  • Keywords
    Fuses; Integral equations; Rectifiers; Semiconductor diodes; Silicon; Steady-state; Surge protection; Temperature; Thyristors; Voltage;
  • fLanguage
    English
  • Journal_Title
    Industry and General Applications, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-943X
  • Type

    jour

  • DOI
    10.1109/TIGA.1971.4181333
  • Filename
    4181333