DocumentCode
836295
Title
A New Quantity to Describe Power Semiconductor Subcycle Current Ratings
Author
Motto, John W., Jr.
Author_Institution
Semiconductor Division, Westinghouse Electric Corporation
Issue
4
fYear
1971
fDate
7/1/1971 12:00:00 AM
Firstpage
510
Lastpage
517
Abstract
A new quantity for predicting the subcycle surge current ratings of silicon diodes and thyristors is presented. The quantity I2¿t is shown to be much more valid than the more conventional I2t rating in coordinating power semiconductors with fast-acting current-limiting fuses. The requirement of the device to block reverse voltage on the next half-cycle following the surge current is reviewed and shown to be quantitatively significant in the subcycle current capability of power semiconductors.
Keywords
Fuses; Integral equations; Rectifiers; Semiconductor diodes; Silicon; Steady-state; Surge protection; Temperature; Thyristors; Voltage;
fLanguage
English
Journal_Title
Industry and General Applications, IEEE Transactions on
Publisher
ieee
ISSN
0018-943X
Type
jour
DOI
10.1109/TIGA.1971.4181333
Filename
4181333
Link To Document