Title :
Dual-Wavelength InAlGaAs–InP Laterally Coupled Distributed Feedback Laser
Author :
Pozzi, Francesca ; De La Rue, Richard M. ; Sorel, Marc
Author_Institution :
Dept. of Electron. & Electr. Eng., Glasgow Univ.
Abstract :
The design and operation of a novel dual-wavelength laterally coupled (LC) distributed feedback (DFB) semiconductor laser are reported. The laser has two different grating periods, one on each sidewall. Stable dual-mode emission, with low threshold currents and good extinction ratio approaching 30 dB, has been demonstrated. Generation of millimeter-wave signals by photomixing has been performed, and the linewidths of each of the individual modes and of the beat mode have been measured as a function of the injection current. It is observed that while the linewidth of the separate modes has a modest dependence on the injection level, the linewidth of the beat mode experiences a strong decrease as the injected current increases
Keywords :
III-V semiconductors; aluminium compounds; diffraction gratings; distributed feedback lasers; gallium arsenide; indium compounds; laser modes; laser stability; millimetre wave generation; semiconductor lasers; spectral line breadth; stimulated emission; InAlGaAs-InP; InAlGaAs-InP laser; beat mode; distributed feedback laser; dual-mode emission; dual-wavelength laser; extinction ratio; grating periods; laterally coupled laser; millimeter-wave signal generation; modal linewidth; photomixing; semiconductor laser; stable laser emission; Distributed feedback devices; Extinction ratio; Gratings; Laser feedback; Laser modes; Millimeter wave measurements; Optical coupling; Optical design; Semiconductor lasers; Threshold current; Distributed feedback lasers; InAlGaAs–InP; dual-wavelength; laterally coupled; photomixing;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2006.887205
