DocumentCode
837489
Title
CdTe stacked detectors for gamma-ray detection
Author
Watanabe, Shin ; Takahashi, Tadayuki ; Okada, Yuu ; Sato, Goro ; Kouda, Manabu ; Mitani, Takefumi ; Kobayashi, Yoshihito ; Nakazawa, Kazuhiro ; Kuroda, Yoshikatsu ; Onishi, Mitsunobu
Author_Institution
Inst. of Space & Astronaut. Sci., Kanagawa, Japan
Volume
49
Issue
3
fYear
2002
fDate
6/1/2002 12:00:00 AM
Firstpage
1292
Lastpage
1296
Abstract
We describe a stacked detector made of thin cadmium telluride (CdTe) diode detectors. By using a thin CdTe device, we can overcome the charge loss problem due to the small mobility and short lifetime of holes in CdTe or cadmium zinc telluride (CdZnTe) detectors. However, a CdTe detector with a thickness of more than 5 mm is needed for adequate detection efficiency for gamma-rays of several hundred keV. Good energy resolution and good peak detection efficiency are difficult to obtain using such a thick CdTe detector. The stacked detector enabled us to realize a detector with both high-energy resolution and good efficiencies for gamma rays up to several hundred keV. In order to verify this concept, we constructed a prototype made of ten layers of a 0.5-mm-thick CdTe diode detectors with a surface area of 21.5 mm×21.5 mm. With this, we have achieved 5.3-keV and 7.9-keV energy resolution [full width at half maximum (FWHM)] at 356 keV and 662 keV, respectively, at the temperature of -20°C.
Keywords
gamma-ray detection; semiconductor counters; 0.5 mm; 253 K; 356 keV; 662 keV; CdTe; CdTe detector; FWHM; charge loss; detection efficiency; energy resolution; gamma-ray detection; peak detection efficiency; stacked detector; Cadmium compounds; Energy resolution; Envelope detectors; Gamma ray detection; Gamma ray detectors; Gamma rays; Schottky diodes; Semiconductor diodes; Semiconductor materials; Zinc compounds;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.2002.1039654
Filename
1039654
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