Title :
Temperature dependence of heavy ion-induced current transients in Si epilayer devices
Author :
Laird, J.S. ; Hirao, T. ; Onoda, S. ; Mori, H. ; Itoh, H.
Author_Institution :
Japan Atomic Energy Res. Inst., Takasakishi, Japan
fDate :
6/1/2002 12:00:00 AM
Abstract :
We report on the temperature dependence of the heavy-ion transient-ion beam induced current response of Si epilayer devices from 80 to 300 K. The measurements were performed on a heavy-ion microbeam in conjunction with the new transient-ion beam induced current system developed at the Japan Atomic Energy Research Institute. Furthermore, we perform a detailed comparison with technology computer-aided design (TCAD) simulations and discuss the results in terms of TCAD modeling, experimental procedure, and the implications for temperature-related single-event upset modeling
Keywords :
ion beam effects; semiconductor device models; semiconductor device testing; semiconductor diodes; semiconductor epitaxial layers; silicon; technology CAD (electronics); transients; 80 to 300 K; Si; Si epilayer devices; TCAD modeling; heavy ion-induced current transients; heavy-ion microbeam; heavy-ion transient-ion beam induced current response; p+nn+ epilayer diode; technology computer-aided design simulations; temperature dependence; temperature-related single-event upset modeling; transient-ion beam induced current system; Atomic measurements; Computational modeling; Computer simulation; Current measurement; Design automation; Performance evaluation; Single event upset; Temperature dependence; Temperature distribution; Temperature sensors;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2002.1039672
