• DocumentCode
    837733
  • Title

    Fermi´s golden rule, nonequilibrium electron capture from the wetting layer, and the modulation response in P-doped quantum-dot lasers

  • Author

    Deppe, D.G. ; Huang, H.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Univ. of Texas, Austin, TX, USA
  • Volume
    42
  • Issue
    3
  • fYear
    2006
  • fDate
    3/1/2006 12:00:00 AM
  • Firstpage
    324
  • Lastpage
    330
  • Abstract
    Electron capture from a quantum dot´s (QDs) wetting layer is described by Fermi´s golden rule that relates the transition rate to the density of final states. The wetting layer capture causes a brief nonequilibrium electron distribution between the QD ground state and its wetting layer states and can slow a QD laser´s modulation response. This effect is studied for time constants and capture conditions relevant to self-organized InAs QDs. It is shown that even a moderately fast electron capture consistent with present low temperature measurements can limit a QD laser´s modulation speed.
  • Keywords
    Fermi level; III-V semiconductors; electron capture; ground states; indium compounds; optical modulation; quantum dot lasers; semiconductor doping; Fermi rule; InAs; ground state; modulation response; nonequilibrium electron capture; p-doped quantum-dot lasers; self-organized InAs QD; wetting layer state; Diode lasers; Electrons; Epitaxial layers; Laser modes; Laser transitions; Quantum dot lasers; Radioactive decay; Semiconductor lasers; Spontaneous emission; Temperature sensors; InAs; laser; photonic crystal; quantum dot (QD);
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.2005.859913
  • Filename
    1597419