DocumentCode
837733
Title
Fermi´s golden rule, nonequilibrium electron capture from the wetting layer, and the modulation response in P-doped quantum-dot lasers
Author
Deppe, D.G. ; Huang, H.
Author_Institution
Dept. of Electr. & Comput. Eng., Univ. of Texas, Austin, TX, USA
Volume
42
Issue
3
fYear
2006
fDate
3/1/2006 12:00:00 AM
Firstpage
324
Lastpage
330
Abstract
Electron capture from a quantum dot´s (QDs) wetting layer is described by Fermi´s golden rule that relates the transition rate to the density of final states. The wetting layer capture causes a brief nonequilibrium electron distribution between the QD ground state and its wetting layer states and can slow a QD laser´s modulation response. This effect is studied for time constants and capture conditions relevant to self-organized InAs QDs. It is shown that even a moderately fast electron capture consistent with present low temperature measurements can limit a QD laser´s modulation speed.
Keywords
Fermi level; III-V semiconductors; electron capture; ground states; indium compounds; optical modulation; quantum dot lasers; semiconductor doping; Fermi rule; InAs; ground state; modulation response; nonequilibrium electron capture; p-doped quantum-dot lasers; self-organized InAs QD; wetting layer state; Diode lasers; Electrons; Epitaxial layers; Laser modes; Laser transitions; Quantum dot lasers; Radioactive decay; Semiconductor lasers; Spontaneous emission; Temperature sensors; InAs; laser; photonic crystal; quantum dot (QD);
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.2005.859913
Filename
1597419
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