Spectral response of a gamma and electron irradiated pin photodiode

Author

Onoda, S. ; Hirao, T. ; Laird, J.S. ; Mori, H. ; Okamoto, T. ; Koizumi, Y. ; Itoh, H.

Author_Institution

Tokai Univ., Kanagawa, Japan

Volume

49

Issue

3

fYear

2002

fDate

6/1/2002 12:00:00 AM

Firstpage

1446

Lastpage

1449

Abstract

The optical spectral response of Si pin photodiodes was examined after gamma and electron irradiation. We observed both a significant decrease in the peak optical response and peak position with increasing total dose. This effect was successfully explained by modeling the degradation of the minority carrier diffusion length in the base region. The diffusion length damage factor was estimated in the context of the nonionization energy loss (NIEL). A close agreement was found between the observed degradation behavior and that predicted by NIEL.

Keywords

carrier lifetime; electron beam effects; elemental semiconductors; gamma-ray effects; minority carriers; p-i-n photodiodes; semiconductor device models; silicon; Si; Si pin photodiodes; base region; diffusion length damage factor; electron irradiation; equivalent displacement damage dose; gamma irradiation; minority carrier diffusion length degradation modeling; nonionization energy loss; optical spectral response; peak optical response; peak position; total dose; Aircraft manufacture; Degradation; Electron optics; Electron traps; Energy loss; Gamma rays; Lamps; Optical sensors; PIN photodiodes; Temperature;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2002.1039681

Filename

1039681