• DocumentCode
    837799
  • Title

    On Oxygen Deficiency and Fast Transient Charge-Trapping Effects in High- k Dielectrics

  • Author

    Wen, Huang-Chun ; Harris, H. Rusty ; Young, Chadwin D. ; Luan, Hongfa ; Alshareef, Husam N. ; Choi, Kisik ; Kwong, Dim-Lee ; Majhi, Prashant ; Bersuker, Gennadi ; Lee, Byoung Hun

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Univ. of Texas, Austin, TX
  • Volume
    27
  • Issue
    12
  • fYear
    2006
  • Firstpage
    984
  • Lastpage
    987
  • Abstract
    This letter correlates fast transient charging (FTC) in high-k gate dielectrics to variations in its oxygen content. Analysis of electrical and physical data suggests that the observed enhancement of FTC may be caused by reduction of the oxygen content in the high-k film due to O scavenging process induced by the HfSix metal electrode. A hypothesis correlating O scavenging from the high-k dielectric to O vacancy formation, which contributes to FTC, is proposed
  • Keywords
    carrier mobility; hafnium compounds; high-k dielectric thin films; HfSi; O scavenging; O vacancy formation; fast transient charge-trapping effects; fast transient charging; high-k gate dielectrics; metal electrode; mobility characteristics; oxygen content; oxygen deficiency; Annealing; CMOS technology; Degradation; Dielectric devices; Electrodes; Electron traps; Hafnium oxide; Oxygen; Threshold voltage; Tin; Charge trapping; O vacancy; high-$k$; metal gate; mobility;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2006.886711
  • Filename
    4016206
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=837799