DocumentCode :
838956
Title :
Quiescent power supply current measurement for CMOS IC defect detection
Author :
Hawkins, Charles F. ; Soden, Jerry M. ; Fritzemeier, Ronald R. ; Horning, Luther K.
Author_Institution :
Dept. of Electr. & Comput. Eng., New Mexico Univ., Albuquerque, NM, USA
Volume :
36
Issue :
2
fYear :
1989
fDate :
5/1/1989 12:00:00 AM
Firstpage :
211
Lastpage :
218
Abstract :
Quiescent power supply current (I/sub DDQ/) measurement is a very effective technique for detecting in CMOS integrated circuits (ICs). This technique uniquely detects certain CMOS IC defects such as gate oxide shorts, defective p-n junctions, and parasitic transistor leakage. In addition, I/sub DDQ/ monitoring will detect all stuck-at faults with the advantage of using a node toggling test set that has fewer test vectors than a stuck-at test set. Individual CMOS ICs from three different fabrication sites had a unique pattern or fingerprint of elevated I/sub DDQ/ states for a given test set. When I/sub DDQ/ testing was added to conventional functional test sets, the percentage increase in failures ranged from 60% to 182% for a sample of microprocessor, RAM, and ROM CMOS ICs.<>
Keywords :
CMOS integrated circuits; electric current measurement; integrated circuit testing; power supplies to apparatus; CMOS IC defect detection; defective p-n junctions; gate oxide shorts; node toggling test set; parasitic transistor leakage; power supply current measurement; quiescent power supply current; stuck-at faults; CMOS integrated circuits; Current measurement; Current supplies; Integrated circuit measurements; Leak detection; Monitoring; P-n junctions; Power measurement; Power supplies; Testing;
fLanguage :
English
Journal_Title :
Industrial Electronics, IEEE Transactions on
Publisher :
ieee
ISSN :
0278-0046
Type :
jour
DOI :
10.1109/41.19071
Filename :
19071
Link To Document :
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