Monte Carlo study of strained GermaniumNanoscale bulk pMOSFETs

Author

Ghosh, Bahniman ; Fan, Xiao-Feng ; Register, Leonard F. ; Banerjee, Sanjay K.

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of Texas, Austin, TX, USA

Volume

53

Issue

3

fYear

2006

fDate

3/1/2006 12:00:00 AM

Firstpage

533

Lastpage

537

Abstract

In this paper, we perform fullband Monte Carlo simulations of nanoscale strained Ge bulk pMOSFETs with compressive strain in the strained Ge layer. We consider transport in the presence of phonon, ionized impurity, surface roughness scattering and impact ionization. Quantum confinement in the inversion layer is taken into account in the form of a modified potential. Strained Gedevices gave higher drive current when compared with unstrained Ge devices for the device structures studied.

Keywords

MOSFET; Monte Carlo methods; elemental semiconductors; germanium; impact ionisation; nanoelectronics; semiconductor device models; surface roughness; surface scattering; Ge; Monte Carlo simulations; compressive strain; impact ionization; inversion layer; ionized impurity; modified potential; nanoscale bulk pMOSFET; phonon transport; quantum confinement; surface roughness scattering; Capacitive sensors; Impact ionization; Impurities; MOSFETs; Monte Carlo methods; Particle scattering; Phonons; Potential well; Rough surfaces; Surface roughness; Germanium (Ge); MOSFET; Monte Carlo (MC); high-; strain;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2005.863765

Filename

1597531