Guided wave modulators in Ti ion implanted LiNbO/sub 3/ waveguides

Author

Ashley, Paul R. ; Chang, William S C ; Buchal, Chris J. ; Thomas, Darrel K.

Author_Institution

US Army Missile Command, Redstone Arsenal, AL, USA

Volume

7

Issue

5

fYear

1989

fDate

5/1/1989 12:00:00 AM

Firstpage

855

Lastpage

862

Abstract

Electrooptic modulators in Ti-ion-implanted LiNbO/sub 3/ waveguides are discussed. Low loss (<1-dB/cm) planar and channel waveguides were fabricated and compared to indiffused waveguides. Higher Delta n values are obtained, allowing smaller waveguide geometries and tighter mode confinement. Wavelengths of 0.85 and 1.3 mu m are used. The small mode profiles resulting from the Ti doses up to 4*10/sup 17/ Ti/cm/sup 2/ resulted in V-L products of 8.8 V-mm at 0.85 mu m and 20 V-mm at 1.3 mu m. These values are lower than any previously reported for a Mach-Zehnder modulator using a buffer layer. Comparison of diffused and implanted waveguide modulators indicated that modular efficiency can be optimized by electrode gap spacing and enhanced with smaller mode profiles achievable in implanted guides.<>

Keywords

electro-optical devices; integrated optics; lithium compounds; optical losses; optical modulation; optical waveguides; titanium; 0.85 micron; 1.3 micron; LiNbO/sub 3/:Ti; Mach-Zehnder modulator; buffer layer; channel waveguides; electrode gap spacing; electrooptic modulators; guided wave modulators; low loss waveguides; mode profiles; planar waveguides; Buffer layers; Electrodes; Electrons; Electrooptic modulators; Electrooptical waveguides; Etching; Hafnium; Implants; Planar waveguides; Wavelength measurement;

fLanguage

English

Journal_Title

Lightwave Technology, Journal of

Publisher

ieee

ISSN

0733-8724

Type

jour

DOI

10.1109/50.19126

Filename

19126