Title :
SOI RESURF LDMOS transistor using trench filled with oxide
Author :
Son, Won-So ; Sohn, Young-Ho ; Choi, Sie-Young
Author_Institution :
Sch. of Electr. Eng. & Comput. Sci., Kyungpook Nat. Univ., Daegu, South Korea
Abstract :
The characteristics of the breakdown voltage and the specific on-resistance of RESURF LDMOS transistors, based on SOI, have been improved by using a trench filled with oxide in the drift region of the device. The breakdown voltage is 352 V and the specific on-resistance is 18.8 mΩ · cm2 with the saturation drain current of 110 μA/μm.
Keywords :
chemical mechanical polishing; isolation technology; oxidation; power MOSFET; semiconductor device breakdown; silicon-on-insulator; CMP process; SOI RESURF LDMOS transistor; breakdown voltage; lateral double-diffused MOSFET; oxide filled trench; power devices; reduced surface field; saturation drain current; specific on-resistance; voltage handling capability; wet oxidation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20031115
