• DocumentCode
    839646
  • Title

    SOI RESURF LDMOS transistor using trench filled with oxide

  • Author

    Son, Won-So ; Sohn, Young-Ho ; Choi, Sie-Young

  • Author_Institution
    Sch. of Electr. Eng. & Comput. Sci., Kyungpook Nat. Univ., Daegu, South Korea
  • Volume
    39
  • Issue
    24
  • fYear
    2003
  • Firstpage
    1760
  • Lastpage
    1761
  • Abstract
    The characteristics of the breakdown voltage and the specific on-resistance of RESURF LDMOS transistors, based on SOI, have been improved by using a trench filled with oxide in the drift region of the device. The breakdown voltage is 352 V and the specific on-resistance is 18.8 mΩ · cm2 with the saturation drain current of 110 μA/μm.
  • Keywords
    chemical mechanical polishing; isolation technology; oxidation; power MOSFET; semiconductor device breakdown; silicon-on-insulator; CMP process; SOI RESURF LDMOS transistor; breakdown voltage; lateral double-diffused MOSFET; oxide filled trench; power devices; reduced surface field; saturation drain current; specific on-resistance; voltage handling capability; wet oxidation;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20031115
  • Filename
    1251564
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=839646