DocumentCode
840296
Title
Resonant tunnelling in AlInAs/GaInAs double barrier diodes grown by MOCVD
Author
Hodson, P.D. ; Robbins, D.J. ; Wallis, R.H. ; Davies, J.I.
Author_Institution
Plessey Res. Caswell Ltd., Towcester
Volume
24
Issue
3
fYear
1988
fDate
2/4/1988 12:00:00 AM
Firstpage
187
Lastpage
188
Abstract
AlInAs/GaInAs double barrier resonant tunnelling structures have been grown by metal-organic chemical vapour deposition and show peak/valley current ratios as high as 3.3:1 at 293 K and 15.3:1 at 77 K. The devices also exhibit current bistability similar to that observed in other materials systems
Keywords
III-V semiconductors; aluminium compounds; chemical vapour deposition; gallium arsenide; indium compounds; negative resistance; semiconductor diodes; semiconductor growth; solid-state microwave devices; tunnelling; 77 to 293 K; AlInAs-GaInAs; III-V semiconductors; MOCVD; NDR; current bistability; double barrier diodes; high speed devices; metal-organic chemical vapour deposition; microwave operation; negative differential resistance; resonant tunnelling structures;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
Filename
191620
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