• DocumentCode
    840307
  • Title

    Ultrahigh-voltage double interdigitated (TIL) gate-assisted turnoff thyristors

  • Author

    Silard, A. ; Stefan, Colibaba ; Floru, F. ; Turtudau, F. ; Dumitrescu, G.

  • Author_Institution
    Dept. of Electron., Polytech. Inst., Bucharest
  • Volume
    24
  • Issue
    3
  • fYear
    1988
  • fDate
    2/4/1988 12:00:00 AM
  • Firstpage
    188
  • Lastpage
    190
  • Abstract
    The development of ultrahigh voltage (>3500 V), high current (>1000 A), 3.6 cm2 area double-interdigitated (TIL) gate-assisted turnoff thyristors (GATTs) exhibiting a reduced turnoff time by a factor of more than two with a gate-assist of only 1 A and having excellent overall electrical performance is reported
  • Keywords
    thyristors; 1000 A; 3500 V; GATTs; TIL; double interdigitated; gate-assisted turnoff; high current; power semiconductor devices; thyristors; ultrahigh voltage;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • Filename
    191621
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=840307