Title :
Ultrahigh-voltage double interdigitated (TIL) gate-assisted turnoff thyristors
Author :
Silard, A. ; Stefan, Colibaba ; Floru, F. ; Turtudau, F. ; Dumitrescu, G.
Author_Institution :
Dept. of Electron., Polytech. Inst., Bucharest
fDate :
2/4/1988 12:00:00 AM
Abstract :
The development of ultrahigh voltage (>3500 V), high current (>1000 A), 3.6 cm2 area double-interdigitated (TIL) gate-assisted turnoff thyristors (GATTs) exhibiting a reduced turnoff time by a factor of more than two with a gate-assist of only 1 A and having excellent overall electrical performance is reported
Keywords :
thyristors; 1000 A; 3500 V; GATTs; TIL; double interdigitated; gate-assisted turnoff; high current; power semiconductor devices; thyristors; ultrahigh voltage;
Journal_Title :
Electronics Letters
