DocumentCode
840341
Title
Starting phenomenon in negative resistance FET oscillators
Author
Gamand, P. ; Pauker, V.
Author_Institution
Labs. d´´Electron. et de Phys. Applique, Limeil-Brevannes, France
Volume
24
Issue
15
fYear
1988
fDate
7/21/1988 12:00:00 AM
Firstpage
911
Lastpage
913
Abstract
The letter provides a study and an explanation of the starting phenomenon in an FET oscillator. It has been shown that the behaviour of the negative resistance with the amplitude of the RF signal leads to a lag effect in the response of the oscillator. This effect is due to the nonlinearity of the transconductance of the active device. Simulations have been made using accurate large signal models included in a time domain analysis software package
Keywords
field effect transistors; oscillators; semiconductor device models; explanation; large signal models; negative resistance FET oscillators; starting phenomenon; time domain analysis software package; transconductance nonlinearity;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
Filename
191629
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