• DocumentCode
    840391
  • Title

    Noise model for double barrier resonant tunnel diodes

  • Author

    van de Roer, T.G. ; Heyker, H.C. ; Kwaspen, J.J.M. ; Joosten, H.P. ; Henini, M.

  • Author_Institution
    Dept. of Electr. Eng., Eindhoven Univ. of Technol., Netherlands
  • Volume
    27
  • Issue
    23
  • fYear
    1991
  • Firstpage
    2158
  • Lastpage
    2160
  • Abstract
    A model for the noise of double barrier resonant tunnel diodes has been made on the assumption that shot noise is the main noise source. Feedback caused by the space charge in the quantum well increases the noise in the negative-resistance region and decreases it in the other regions of the I-V characteristic. This is confirmed by experiments.
  • Keywords
    electron device noise; semiconductor device models; tunnel diodes; I-V characteristic; double barrier resonant tunnel diodes; negative-resistance region; noise model; quantum well; shot noise; space charge;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19911336
  • Filename
    104098
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=840391