DocumentCode
840404
Title
DC-92 GHz ultra-broadband high gain InP HEMT amplifier with 410 GHz gain-bandwidth product
Author
Meliani, Chafik ; Post, G. ; Rondeau, G. ; Decobert, Jean ; Mouzannar, W. ; Dutisseuil, E. ; Lefevre, R.
Author_Institution
OPTO, Alcatel R&I, Marcoussis
Volume
38
Issue
20
fYear
2002
fDate
9/26/2002 12:00:00 AM
Firstpage
1175
Lastpage
1177
Abstract
A coplanar distributed amplifier, fabricated in a double channel InP HEMT technology, is presented. It exhibits a 13 dB gain and a 92 GHz -3 dB cutoff frequency that corresponds to a gain-bandwidth product of 410 GHz. Key aspects for distributed and coplanar design around 100 GHz are highlighted
Keywords
HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; distributed amplifiers; field effect MIMIC; indium compounds; millimetre wave amplifiers; wideband amplifiers; 0 to 92 GHz; 100 GHz; 13 dB; HEMT amplifier; InP; coplanar distributed amplifier; cutoff frequency; distributed design; double channel HEMT; gain-bandwidth product; ultra-broadband high gain amplifier;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20020846
Filename
1040981
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