• DocumentCode
    840459
  • Title

    Back-gated field effect in a double heterostructure modulation-doped field-effect transistor

  • Author

    Patil, M.B. ; Agarwala, S. ; Morkoc, H.

  • Author_Institution
    Illinois Univ., Urbana, IL
  • Volume
    24
  • Issue
    15
  • fYear
    1988
  • fDate
    7/21/1988 12:00:00 AM
  • Firstpage
    925
  • Lastpage
    926
  • Abstract
    An Al0.3Ga0.7As/GaAs/Al0.3Ga0.7 As double heterojunction field-effect transistor has been fabricated, the novel feature being a pn junction back gate. A device with 2 μm channel length has yielded a change in transconductance by a factor of 2 for a change in back gate voltage of 1 V. The performance of this device shows that this approach could be used in realising novel devices, such as velocity modulation transistors. Also, the change in threshold voltage with back gate bias could be useful in implementing digital circuits
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; semiconductor technology; Al0.3Ga0.7As-GaAs-Al0.3Ga 0.7As; DH MODFET; HEMT; back gate bias; back gate voltage; back gated field effect; change in threshold voltage; change in transconductance; channel length; characteristics; digital circuits; pn junction back gate; semiconductors; velocity modulation transistors;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • Filename
    191639
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=840459