DocumentCode
840481
Title
Vertical cavity surface-emitting laser with an AlGaAs/AlAs Bragg reflector
Author
Sakaguchi, T. ; Koyama, Fumio ; Iga, Kenichi
Author_Institution
Tokyo Inst. of Technol., Yokohama
Volume
24
Issue
15
fYear
1988
fDate
7/21/1988 12:00:00 AM
Firstpage
928
Lastpage
929
Abstract
The letter elucidates the room temperature pulsed operation of a vertical cavity surface-emitting laser with an electrically conductive AlGaAs/AlAs distributed Bragg reflector (DBR). The maximum reflectivity of a DBR grown by MOCVD was 96% at 0.88 μm wavelength. The threshold current of 30 μm diameter devices was 200 mA under room temperature pulsed condition, which is the lowest value for such a broad area structure
Keywords
III-V semiconductors; aluminium compounds; chemical vapour deposition; distributed Bragg reflector lasers; gallium arsenide; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; 0.88 micron; 20 C; 200 mA; 30 micron; AlGaAs-AlAs reflector; MOCVD; broad area structure; distributed Bragg reflector; reflectivity; room temperature pulsed operation; threshold current; vertical cavity surface-emitting laser; wavelength;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
Filename
191641
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