• DocumentCode
    840490
  • Title

    Effect of cooling ambient on electrical activation of dopants in MOVPE of InP

  • Author

    Cole, Stijn ; Evans, Jamie S. ; Nelson, A.W. ; Wong, Simon

  • Author_Institution
    British Telecom Res. Labs., Ipswich
  • Volume
    24
  • Issue
    15
  • fYear
    1988
  • fDate
    7/21/1988 12:00:00 AM
  • Firstpage
    929
  • Lastpage
    931
  • Abstract
    The electrical doping level of p-InP (Zn or Cd) cooled from typical MOVPE growth temperatures is strongly dependent on the gaseous cooling ambient. This is the result of electrical deactivation rather than loss of the dopant. Atomic H is found in samples cooled in AsH3 or PH3 and the possibility of an H passivation mechanism is discussed
  • Keywords
    III-V semiconductors; indium compounds; semiconductor doping; semiconductor growth; vapour phase epitaxial growth; AsH3 atmosphere; H; H passivation mechanism; InP; MOVPE; PH3 atmosphere; electrical activation of dopants; electrical deactivation; electrical doping level; gaseous cooling ambient;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • Filename
    191642
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=840490