A High-Performance Polysilicon Thin-Film Transistor Built on a Trenched Body

Author

Lin, Jyi-Tsong ; Huang, Kuo-Dong

Author_Institution

Dept. of Electr. Eng., Nat. Sun Yat-Sen Univ., Kaohsiung

Volume

55

Issue

9

fYear

2008

Firstpage

2417

Lastpage

2422

Abstract

In this paper, a high-performance polysilicon thin-film transistor (poly-Si TFT) with a trenched body is proposed, fabricated, and studied. This new trenched TFT can be easily produced by filling and etch-back technology without destroying the channel film quality. The addition of the body trench is found to reduce the off-state leakage current by 70% on average, because the trench induces a carrier scattering effect in the poly-Si grain-boundary traps, thereby affecting the leakage path. Although the off-state current is substantially reduced, the on-state current is comparable with that of a conventional TFT. Our multiple-trenched-body TFT is also shown to improve the breakdown voltage by 11%.

Keywords

grain boundaries; impurity scattering; leakage currents; silicon; thin film circuits; thin film transistors; Si; carrier scattering effect; channel film quality; etch-back technology; filling; grain-boundary traps; leakage path; off-state leakage current; polysilicon thin-film transistor; trenched body; Circuits; Degradation; Electric resistance; Etching; Fabrication; Filling; Immune system; Implants; Leakage current; Thin film transistors; Back-interface conduction; OFF-state leakage; grain-boundary traps; lateral electric field; thin film transistor (TFT); trenched body;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2008.927667

Filename

4603173